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应用科学学报 ›› 1987, Vol. 5 ›› Issue (1): 72-78.

• 论文 • 上一篇    下一篇

InP欧姆接触研究

吴鼎芬1, 王德宁1, 张俊2   

  1. 1. 中国科学院上海冶金研究所;
    2. 上海钟表研究所
  • 收稿日期:1984-01-13 修回日期:1984-05-26 出版日期:1987-03-31 发布日期:1987-03-31

RESEARCHES ON InP OHMIC CONTACT

WU DINGFEN1, WANG DENING1, ZHANG JUN2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Shanghai Watch and Clock Research Institute
  • Received:1984-01-13 Revised:1984-05-26 Online:1987-03-31 Published:1987-03-31

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摘要： 按金属与半导体接触的载流子输运理论,计算了n或p型InP的比接触电阻ρo值.计算结果以势垒高度φB自0.3~1.0eV,ρo与载流子浓度(1018~1021cm-3)关系用图表示出来.当退火温度小于350℃,3分钟退火Au与InP的φB并不改变.如退火温度大于350℃,则Au与n-InP在3分钟退火后形成差的欧姆接触,但对p-InP则只是势垒退化,即φB降低.这样合金化开始温度应在350℃左右.用本文实测及文献中发表的AuZn/p-InP的实验数据与理论计算进行比较,对目前p型InP欧姆接触工艺中存在的问题进行了讨论.

Abstract: The values of specific contact resistance (p0) for both Au/n-InP and Au/p-InP have been calculated theoretically based on the carrier transport study of metal-semiconductor systems. The results, which are presented graphically, show the dependence of p0 on impurity concentration from 1018 to 1021cm-3, and the barrier height from 0.3~1.0 eV. It is found that the Schottky barrier height (φB) would not be changed with annealing temperature below 350℃ in 3 min. When the annealing temperature is higher than 350℃, a poor ohmic contact will be formed in the case of Au/n-InP system, but for Au/n-InP system, only a reduction of φB will be observed. It is determined that an obvious alloying takes place at about 350℃. The computed theoretical results are used to interpret the experimental data of Au Zn/p-InP ohmic contact published in the literatures and the problems exist in our p-type ohmio contact technology are discussed.