Abstract: Low dislocation InP crystals in a<111>P direction were pulled with a liquid encapsulated Czochralski technique by impurity doping procedure. Grown-in dislocations were diminished when the sulfur or sulfide was doped. The impurity effect on the dislocation density was examined. Dislocation density was obviously decreased when sulfur concentration exceeded 2×10¹⁸ cm^-3 with compensation ratio in the range of 0.1~0.3. The coefficient of effective distribution of sulfur in InP grown by LEC is 0.68.
Since S-doped InP crystals have better radial and longitudinal homogeneity than Sn-doped ones, it will bring about stabilization in device fabrication and improvement in material applicability.