Abstract: A cooling stage with minimum, temperature of 83 K has been attached to a scanning electron microscope (type DX-3A, manufactured in China). InSb photovoltaic infrared detectors have been characterized by low temperature electron beam induced voltage (EBIY) technique. The extension of responsive areas of the detectors have been shown distinctly in the EBIV images. The nonuniformity of responsivity over a detector area resulting from imperfections can be detected sensitively. Also, the isolation imperfection between neibonring elements of a detector array can be shown conveniently. For the mesa type detector, it is possible to determine the depth of p-n junction nondostructively by the EBIV profile of the detector.