Table of Content

30 September 1984, Volume 2 Issue 3

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Articles

LIQUID PHASE EPITAXY OF InSb_1-xBi_x

SUN QING, WU WENHAI, ZOU YUANXI, SHI HUIYING

1984, 2(3):  189-194. 

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The work reported in this paper may be divided into three parts, viz-measurement of liquid solubilities of InSb in the metallic solvents Bi and In-Bi, LPE of InSb_1-xBi_x and current-controlled LPE of InSb_1-xBi_x.On the basis of the solubility data within the temperature range 300-450℃, the following equation has been obtained.

HEAT TREATMENT OF Hg_0.8Cd_0.2Te AT 600℃ IN A CLOSED SYSTEM

XIA YIBEN, CAO ZECHUN, TANG DINGYUAN

1984, 2(3):  195-202. 

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The P-type conversions of Hg_0.8Cd_0.2Te after short-time (10'-15') heat treatment at high-temperature (600℃) are explained by mercury-vacancy diffusion, model, the heat treatmented samples are thinned step by step, and the Hall coefficients and resistivities are measured at 77 K for each step. The distributions of mercury vacancy in the samples are thus found from these measurements It is found that the experimental results are in good agreement with the mercury-vacancy diffusion model. The diffusion cofficient of meroury vacancy in Hg_0.5Cd_0.2Te at 600℃ is estimated to be about 2×10⁵μm²/h. Its activation energy Q is about 0.6eV. The final concentration of mercury vacancy in the samples, L_f varies inversely as Hg-presure in the closed system. Its proportionality factor, K_f/K_i is 5×10¹⁹cm^-3atm.

A NEW EXPLANATION OF THE M-LINE SPECTRA AS FORMED BY A PRISM COUPLED TO AN OPTICAL WAVEGUIDE

LAI ZUYOU, FANG JUNXIN

1984, 2(3):  203-209. 

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In this paper, we reconsider the formation of the M-line of the prism-film coupler. The energy fed back from the waveguide to the prism gives rise to a parallel beam. The straight-edge diffraction of this parallel beam superposing on the light spot constitutes the so-called M-line.

THE ANALYSIS AND EXPERIMENTAL RESULTS OF A VARACTOR-TUNED GUNN OSCILLATOR

LI YING, ZHOU NAN SHAN

1984, 2(3):  210-220. 

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This paper discribeg the design and experimental results of fullheight waveguide of electronically tunable X-band microwave solid state oscillators. The design equations are derived on the basis of coupled network of waveguide-post structure by utilizing the dyadic Green's function of a rectangular waveguide.
An experimental X-band oscillator hag been built, with continuously tunable bandwidth of 1000 MHz and output power of 100 mW. Its ripplea are within 1dB without jump.
This oscillator has been successfully used in solid state FM-CW radar system, microwave scatterometer, FM-jamming stations and frequency-agile local oscillator.

LOW NOISE STABLE He-Cd LASER OF A-O FEEDBACK AT BREWSTER ANGLE IN CAVITY

JIANG JIALIN, ZENG YONGJIAN, ZHU SANYOU, LU JIANHUA, CHIU MINGXIN

1984, 2(3):  221-226. 

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The noise characteristic and the stability of He-Cd lager at 4416Å have been investigated. The noise spectra and the relations between noise and discharge current as well as He pressure have been measured. The method of using the A-0 feedback at Brewster angle in cavity is introduced to reduce the noise of He-Cd laser and the results have been good. The A-O device is 6 mm thick quartz, 40MHz in frequency. The transducer is made of the crystal LiNbO₃, being operated in Raman-Nath diffraction to modulate the cavity loss according to the laser power, after operating che device, the noise ratio decreases from 6.3% to 1.5% and all the noise amplitudes tan be obviously reduced in the band from 2 Hz to 200 kHz, the fluctuation of laser output power comes down from 11.6% to 3.7% and the laser power decreases from 35mW to 30 mW with the optical loss 14%. By changing the discharge parameters, the high power with low noiso He-Cd laser having noise ratio 0.8% and output power 33mW may be abtained. There is no need to change the laser structure for this method, which may be applied on the He-Cd laser having higher power and other lasers.

A PRELIMINARY REPORT FOR DETERMINING ACTIVITY OF IMMOBILIZED GLUCOSE OXIDASE BY COLORIMETRY

HUA JIADONG, ZHANG XIANKANG, YANG DERONG

1984, 2(3):  227-232. 

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It was difficalt to find a suitable system to determine the activity of immobilized glucose oxidase which was produced from entrapping enzyme by means of colorimetry from initail velocity assay. A two-step "Simulate system" and a convenient calibration formula A=A₀(1-e^-β[E]) were given in this paper. Where a was absorbed optical density,[E] was the concentration of the immobilized glucose oxidase, A₀ and β were constants under a given experimental condition. The more correct activity of immobilized glucose oxidase might be obtained by using the formula mentioned above.

DETECTING BRIDGING AND STUCK-AT TAULTS IN COMBINATIONAL NETWORKS

XU SHIYI, STEPHEN Y. H. SU

1984, 2(3):  233-240. 

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The testing of bridging faults (short circuits) hag become increasingly important with the increasing density in LSI (large scale integration) and VLSI (very large scale integration) chips. In this paper we study the feedback bridging faults (FBF) between inputs and the output by using a new model for sequential machines. The necessary and sufficient conditions for generating oscillation and asynchronous behavior in a feedback bridging faulty network are given. It is shown that any feedback bridging faults between primary inputs and the primary output in any general combinational networks can be betected by using only two test patterns. Next, we show that by using the patterns for detecting stuck-at faults, bridging faults between internal lines inside a combinational network can be detected. A procedure is presented to derive the complete test set for detecting both bridging and stuck-at faults in fan-out free combinational networks.

EFFECT OF DRY HCI ON THERMALLY GROWN SiO₂

LU DEREN

1984, 2(3):  241-246. 

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By using very dry HCl gas as an additive species in thermal oxidation ambient, we obtained an aluminium film MOS structure with an almast zero fixed oxide charge, an interface trap density below 1×10¹⁰ no./cm²-eV and a passivation efficiency above 99.5% at an intentional high sodium contamination of about 3×10¹³ ions/cm². Reasons responsible for these results are discussed.

THE ELECTRIC FIELD MODEL OF THE REACH-THROUGH SILICON AVALANCHE PHOTODIODES WITH ION IMPLANTATION TYPE OF IMPURITY PROFILES

WANG DENING, HU WEIYANG, SHUI HAILONG

1984, 2(3):  247-252. 

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When the n+-p-π-p⁺ reach-through silicon avalanche photodiodes (Si-RAPD) was fabricated by the ion implantation technique, it electric field can be obtained by means of the Gassian type impurity profile model. The relation between the multiplication factor M and the voltage V was found. The effects of the electric field strength on the breakdown voltage V_B, the depletion layer width W, and the effective ionization coneffioient K_eff are discussed in detail. The theoretically calculated results are in good agreement with experimentally measured values. By means of this model, it will be quite convenient to carried out the optimum design of the Si-RAPD.

A TEM STUDY ON SURFACE DAMAGE CAUSED BY CUTTING ON SEMICONDUCTIVE MATERIALS

LU YINING, GU SHUXIANG

1984, 2(3):  253-259. 

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Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection High Energy Electron Diffraction (RHEED) after step-etching the samples. The results have shown that under same cutting condition, the depth of damage layers is correlated with material itself being cut; The structure of damage layers varies with the depth of damage layers; Under different cutting conditions, the damage on the surface of a material is different. We consider that damage layers on near perfect crystal consist of polycrystal layer, mosaic structure layer and distorted layer.

CHARACTERIZATION OF InSb INFRARED PHOTODIODES BY ELECTRON BEAM INDUCED VOLTAGE TECHNIQUE

CHEN BOLIANG, YU JINBI, DIN SHUZHENG, WANG XINFENG

1984, 2(3):  260-266. 

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A cooling stage with minimum, temperature of 83 K has been attached to a scanning electron microscope (type DX-3A, manufactured in China). InSb photovoltaic infrared detectors have been characterized by low temperature electron beam induced voltage (EBIY) technique. The extension of responsive areas of the detectors have been shown distinctly in the EBIV images. The nonuniformity of responsivity over a detector area resulting from imperfections can be detected sensitively. Also, the isolation imperfection between neibonring elements of a detector array can be shown conveniently. For the mesa type detector, it is possible to determine the depth of p-n junction nondostructively by the EBIV profile of the detector.

AN INVESTIGATION ON THE IMPURITIES AND DEFECTS OF Ⅲ-Ⅴ COMPOUND SEMICONDUCTORS WITH LOW TEMPERATURE PHOTOLUMINECENCE

WANG SHOUBO, WU RUEYDEA, XUE ZHONQFA

1984, 2(3):  267-273. 

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In this paper, the photoluminescence spectra of n-GaAs and n-InP single crystals as well as epitaxial n-InP have been investigated. The electrical properties were measured by means of c-v. It was determined that the residual acceptor impurities are dominantly C and Si in the undoped GaAs. By ion implantation with Si at room temperature, followed by annealing treatment, it has been proved that the 1.403eV peak of the spectrum in GaAa is related with Si and V_As. Incorporated with the results of the chemical analysis as well as the ion probe, the investigation of the spectra for the undoped n-InP crystals shows that the -1.38eV peak of the spectrum is caused by C acceptor; 1.08 and -1.2eV speaks are connected with V_P and V_In respectively.

THE MECHANISM OF PHOTOLYSIS OF CF₂HCL BY CO₂ LASER

MUO GUORONG, LI CHANGLIN

1984, 2(3):  274-276. 

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The pyrolysis of CF₂HCl hag been studied. This reaction is a heterogeneous reaction. The reaction channels are depending on the property of surfaces. On Ag surface, the products of this reaction is quite simple, mainly C₂F₄. The yield of C₂F₄ is rather high in above reaction. On SiO₂ surface, the main by-product is SiF₄.

VISIBLE LIGHT EMISSION FROM NITROGEN IMPLANTED GaAs

ZHOU JICHENG, SHEN DEXIN, QIAO YONG, XU CHENMEI, WENG YUMIN

1984, 2(3):  277-279. 

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The visible light emission from nitrogen implanted GaAs by applying reverse bias has been observed for the first time in our laboratory.
Samples were prepared with following procedures:zino diffusion, nitrogen implantation (at 450℃), annealed under H₂ atmosphere at temperature from 540°G up to 600-650℃ by applying the uncoating technique, and finally meases were performed by conventional techniques.

AN INVESTIGATION OF PHOTOCONDUCTIVITY AND PHOTO-HALL EFFECT IN SI-GaAs

ZHONG JINQUAN, TAN LIFANG, LIAO LIYIN, WANG LER, CHEN ZENGXTU

1984, 2(3):  280-282. 

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A equipment for the measurements of photo-conductivity and photo-Hall effect, which provides a useful tool to investigate the influences of deep level impurities on the properties of semi-insulating materials, has been developed. The results at RT and 77 K by using this equipment on several different types of SI-GaAg crystals are reported. We also discuss some features of spectra obtained from these measurements. in view of the existence of Cr and O levels in crystals.