Journal of Applied Sciences ›› 1984, Vol. 2 ›› Issue (3): 277-279.
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ZHOU JICHENG1, SHEN DEXIN1, QIAO YONG1, XU CHENMEI1, WENG YUMIN2
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Abstract: The visible light emission from nitrogen implanted GaAs by applying reverse bias has been observed for the first time in our laboratory.Samples were prepared with following procedures:zino diffusion, nitrogen implantation (at 450℃), annealed under H2 atmosphere at temperature from 540°G up to 600-650℃ by applying the uncoating technique, and finally meases were performed by conventional techniques.
ZHOU JICHENG, SHEN DEXIN, QIAO YONG, XU CHENMEI, WENG YUMIN. VISIBLE LIGHT EMISSION FROM NITROGEN IMPLANTED GaAs[J]. Journal of Applied Sciences, 1984, 2(3): 277-279.
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https://www.jas.shu.edu.cn/EN/Y1984/V2/I3/277