中文

Journal of Applied Sciences ›› 1985, Vol. 3 ›› Issue (1): 52-56.

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DETERMINATION OF DEEP LEVER CENTERS ON GaAs MESFET BY CONDUCTANCE DLTS

SHENG CHI1, ZHAN QIANBAO2   

  1. 1. Fudan University;
    2. Shanghai Institute of Metallurgy Chinese Academy of Sciences
  • Received:1982-06-28 Revised:1982-11-22 Online:1985-03-31 Published:1985-03-31

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Abstract: A conductance DLTS is developed to detect traps in epitaxial grown and ion-implanted GaAs MESFETS. The trap of EV+0.91eV which is generally regarded as Cr level and the trap of EV+0.52eV exist in both devices. Besides, a level of EV 4-0.71eV exists only in ion-implanted devices with large noise. A large and wide energy band at EV+0.2~EV+0.5eV is attributed to interface state which exists only in epitaxial large-noise FET and degraded devices.
The trap in ion-implanted GaAs FET can be decreased to a level of the best-quality epitaxial FET.