Journal of Applied Sciences ›› 1987, Vol. 5 ›› Issue (4): 363-367.
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NI QINGXIAO
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Abstract: This paper presents brief analytical expressions on profiles of potential, field and charge density in strong accumulation layers and strong inversion layers of semiconductor sarface layers. A characteristic length D is defined and its physical significance is discussed.
NI QINGXIAO. BRIEF ANALYTICAL EXPRESSIONS ON PROFILES OF POTENTIAL,FIELD AND CHARGE DENSITY IN SURFACE SPACE CHARGE LAYERS OF SEMICONDUCTORS[J]. Journal of Applied Sciences, 1987, 5(4): 363-367.
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https://www.jas.shu.edu.cn/EN/Y1987/V5/I4/363
