Journal of Applied Sciences ›› 1987, Vol. 5 ›› Issue (4): 368-371.
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DU YANCHENG, LU ZHONG, WU SUHUA, YU ZENGQI, LI XINFU, SUN DIECHI, LI FUMING
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Abstract: Using a large area low energy electron beam, a technique of rapidly annealing 4ETPM has been shown. The characteristics of ion-implanted resistor, transistor, Schottky diode and gate indicate that this can successfully be used in E-beam annealing for IC fabrication.
DU YANCHENG, LU ZHONG, WU SUHUA, YU ZENGQI, LI XINFU, SUN DIECHI, LI FUMING. APPLICATION OF LARGE AREA LOW ENERGY ELECTRON BEAM ANNEALING IN FABRICATION OF 4ETPM INTEGRATED CIRCUIT[J]. Journal of Applied Sciences, 1987, 5(4): 368-371.
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https://www.jas.shu.edu.cn/EN/Y1987/V5/I4/368
