Abstract: On the basis of the equilibrium Cd partial pressure over the cadmium telluride melt determined by means of optical absorbance measurement, cadmium telluride single crystals were grown from the melt under a vapor phase with controlled Cd partial pressure. The deviation of the crystal composition from the stoichiometric was effectively controlled; The crystal perfection, electrical properties and optical properties were improved obviously. The values of some properties were of the same order of magnitude or better than the best data reported in the literature.
The tentative use of our cadmium telluride single crystals to fabricate the temperature sensor and Liquid junction optochemical cell, and to act as the substrate for the hot wall epitaxial growth of cadmium telluride film yielded very satisfactory results.