中文

Journal of Applied Sciences ›› 1989, Vol. 7 ›› Issue (4): 374-376.

• Articles • Previous Articles    

PHOTOLUMINESCENCE OF GaAs FOR TRANSFERRED ELECTRONIC DEVICE

HOU ZHUANG, SU JIULING, WANG CHANGPING, QU FENGYUAN   

  1. Fudan University
  • Received:1986-03-28 Revised:1986-08-02 Online:1989-12-31 Published:1989-12-31

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Abstract: The photoluminescence of N-GaAg material used to manufacture the transferred electronic device is reported. On condition that there are the same electrical parameters, there exist more complexes of the Ga vacancy and donor impurity in VPE N-GaAs samples for low device yield.