Journal of Applied Sciences ›› 1991, Vol. 9 ›› Issue (3): 258-262.
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CHEN cUNLI1, cAO MINGSHU1, HUA WENYU2
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Abstract: In this paper, the behaviors of WSi2 formed from cosputtering W-Si film after rapid thermal annealing in vacuum for 15 sec. are investigated by Raman scattering, SEM, XRD, AES and resistivity measurements. There are two characteristic Raman peaks of WSi2 at 331 and 450cm-1. Crystallization of WSi2 increases with the increase in temperature of rapid thermal annealing. It is found that a W5Si3 phase exists in WSi2, but its behavior is still WSi2 character.
Key words: tungsten disilicide (WSi2), Raman scattering, vacuum rapid thermal annealing
CHEN cUNLI, cAO MINGSHU, HUA WENYU. NEW MATERIAL FOR VLSI-FORMATION OF WSi2 BY RAPID THERMAL ANNEALING[J]. Journal of Applied Sciences, 1991, 9(3): 258-262.
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https://www.jas.shu.edu.cn/EN/Y1991/V9/I3/258
