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    30 September 1991, Volume 9 Issue 3
    Articles
    DIRECTION OF ENERGY FLOW OF MAGNETOSTATIC SURFACE AND VOLUME WAVES IN FERRIMAGNETIC FILM
    WANG QI, BAo JIASHAN
    1991, 9(3):  189-195. 
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    The magnetostatio surface and volume waves are dispersive in ferrimagnetio film wave guide and exhibit wave vector anisotropy go that, in general,the energy flow and wave veotor are noncollinear. Theoretical investigation is made in this paper of variations of the direction of energy flow of magnetostatio surface and volume waves with the changes of the direction of the biasing magnetic field.
    A RECURSIVE ALGORITHM FOR GENERATING CURVES
    YANG ZHENGroNG, YAO LINGSHENG, GAN JUNREN
    1991, 9(3):  196-200. 
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    A recursive algorithm for generating curves is presented here This algorithm is simple and easy to implement. It is a part of the GDL system, which is a Found and optic device's graph processing system developed by us, and has been verified with the running of the system.
    GEOMETRIZATION NUMBER THEORY ELIMINATING SINGULARITY APPROACH IN THE THEORY OF ELECTROMAGNETISM(Ⅱ) Reduced Charge Distribution, General Formal Solution and Number Theory Eliminating Singularity Theorem
    DAI XIANXI, XU XINWEN, LI HONGFANG, ZHONG WANGHEN, HUANG JINGYI
    1991, 9(3):  201-208. 
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    This paper is the second one of the paper series on GNES approach. In this paper the concept of reduced charge distribution is suggested and its applications are discussed. The formal solutions of the general basic integral equation systems are given, which express the coefficients of capacity by the geometric parameters of the device directly. The number theory eliminating singularity theorem is also given. It provides a scheme, which simultaneously applies the number theory and naturally cancels the diagonal singularities of the integral kernels without introducing any adjustable parameters.
    ON THE OSCILLATION CONDITION OF SECOND ORDER SYSTEM
    ZHANG CHANGBO
    1991, 9(3):  209-214. 
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    This paper will give conditions of second order system oscillation. We will make a farther study on the conditions of the oscillation of the non-linear system (3) having deviation variable on the basis of that of system (2) which improves some of the results having published at home and abroad.
    ARC CURRENT CONTROL SYSTEM OF ION SOURCE BASED ON SINGLE CHIP MICROCOMPUTER
    ZHAI QIGANG, YU GUANGYI, XU LINMU, CHEN WEIMING
    1991, 9(3):  215-221. 
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    A control system of arc current of ION source has been designed and constructde by using a single chip microcomputer. This system transmits the information of the ION source by optical fibers from the very high voltage side to the ground voltage side. By optical communication, the part of the control system located on the ground voltage side is insulated from the very high voltage. This control system can be used to control the arc current of two different types of ION sources:the direct heating ION source and indirect heating ION source. The stability of the arc current of the ION source using this control system is less than ±1% (F. S.).
    SCATTERING OF ELASTIC WAVE (SH) BY PERIODICALLY ARRAYED CRACKS AT THE INTERFACE OF TWO BONDED DISSIMILAR ELASTIC HALF-SPACES
    ZOU ZHENZHU, ZHANG ZIMAO, MA XINGRUI
    1991, 9(3):  222-232. 
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    Recently the scattering of elastic waves by a single crack has been studied in considerable detail. In this paper, the interaction of elastic waves (SH) with periodically arrayed cracks at the interface of two bonded dissimilar elastic half-spaces is considered. Using the Finite Fourier Transform technique, the solution of the mixed boundary value problem for a typical strip is reduced to a first kind of singular integral equation with a singular kernel of ctg π/(2l)(u-x), where l is the width of the periodical strip. By means of the Chebyshev polynomial, the numerical calculation of the integral equation is concluded. And finally, the variation of the stress intensity factor at the crack rim and the magnitude of scattering displacement at the far-field with the frequencies of the incident wave have been given numerically.
    MULTIPLE-CRITERION OPTIMIZATION FOR CMOS INVERTER CHAIN WITH YIELD MAXIMIZATION
    HAO YUE
    1991, 9(3):  233-242. 
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    In this paper, the mathematical model of the CMOS inverter chain for multiple-criterion optimization and the procedure of building objective functions are given. An algorithm of asynchronous statistical optimization is suggested in which objective functions of yield and others are optimized with different steps. The analytic descriptions of calculating the circuit yield can be obtained. At last, an example of the CMOS design with multiple objectives is given with numerical analysis, and the feasibility of the algorithm is demonstrated based on the simulation results.
    THE FIELD DISTRIBUTION OF MAGNETIC HEAD-MEDIUM SYSTEM
    CHEN JIANYONG, XU SHUJUN
    1991, 9(3):  243-250. 
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    In this paper, a computer simulation using FEM is described for the head-medium system of numerical magnetic recording. The field and the vector magnetization distributions of the model which takes the head and the medium as one body are given. The vector magnetic hysteresis model is used as the magnetization process of the medium and the measured values of the head material are used as the head's hysteresis model.
    DESIGN AND FABRICATION OF DISPERSION-FLAT QUADRUPLE-CLAD FIBERS
    XIAO TIANPENG, CHEN XIHAO
    1991, 9(3):  251-257. 
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    Dispersion-flat fibers are very attractive for long distance high-bit optical fiber communication systems. This paper discusses the theory of the quadruple-clad single-mode fibers, and describes their design and performance. The initial experimental results, concerning a fiber with low dispersion over the 1.3μm -1.55μm wavelength interval are presented.
    NEW MATERIAL FOR VLSI-FORMATION OF WSi2 BY RAPID THERMAL ANNEALING
    CHEN cUNLI, cAO MINGSHU, HUA WENYU
    1991, 9(3):  258-262. 
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    In this paper, the behaviors of WSi2 formed from cosputtering W-Si film after rapid thermal annealing in vacuum for 15 sec. are investigated by Raman scattering, SEM, XRD, AES and resistivity measurements. There are two characteristic Raman peaks of WSi2 at 331 and 450cm-1. Crystallization of WSi2 increases with the increase in temperature of rapid thermal annealing. It is found that a W5Si3 phase exists in WSi2, but its behavior is still WSi2 character.
    THE SEGREGATION OF METAL IMPURITIES IN SILICON AND ITS APPLICATION TO DEVICE TECHNIQUE
    ZHENG GUOXIANG, ZHOU SHOUTONG, WU JIANGEN, WANG cHANGPING, QU FENGYUAN, DING ZHIFA
    1991, 9(3):  263-268. 
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    Heavy metal gettering in silicon devices has been investigated. The mechanisms of phosphorus diffusion gettering are generally attributed to induced dislocations or phosphide. It is shown in this work that the final annealing at low temperature is able to produce gettering action. The new gettering mechanism with segregation annealing is also discussed here. The segregation coefficients between phosphorus doped silicon and intrinsic silicon Suggest that the segregation bemperature must be as low as possible, but compatible with gold mobility.
    The segregation annealing technique can be used to obtain a dark current of less than 10pA/mm2 in making photoelectric detectors. The general applicability of the technique is also described.
    A STUDY ON THE LEANED BURR FORMATION IN METAL CUTTING
    WANG GUICHENG, KAZUO NAKAYAMA, MINORU ARAI
    1991, 9(3):  269-275. 
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    On the basis of the process of metal cutting, a model for the leaned burr formation in metal cutting is made. Then the principle of forming the leaned burrs is studied, and the related theories are analyzed, thus a clear understanding of the forming process and the influencing factors of the burrs is obtained. Furthermore, a certain number of measures to prevent the burrs are advanced in order to control and decrease the formation of the machining burrs, guarantee and improve cutting quality, and develop new methods to restrain the machining burrs.
    Research Notes
    CALCULATION OF CRITICAL TEMPERATURE FOR OXIDE SUPERCONDUCTORS BASED ON SOLITONSTATISTICS OF φ4FIELD
    LIN JIATIH, ZHANG LINGYUN
    1991, 9(3):  276-279. 
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    Based on Davydov's bisoliton theory on high-superconductors and a complex transformation, we prove that the displacement in the above theory satisfies the φ4 field form at low excitation approximation. The critical temperature is studied by the soliton statistics method at high-temperature approximation. The fact that the theoretical values approach the experimental values in superconductors YBa2Ou3O7-δ and La1-δSr0.2CuO4 supports the Davydov theory.
    A RIGOROUS METHOD OF MAGNETIC-LAYER THICKNESS MEASUREMENT
    XUN PEIJUE, LI GUIXIN
    1991, 9(3):  280-282. 
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    In this paper, we propose a rigorous method of magnetic-layer thickness measurement by means of scanning electron microscopy (SEM). The sample manufacturing technique is introduced, and the SEM pictures of the magnetic-layer thickness of a flexible disk are given.