Journal of Applied Sciences ›› 1992, Vol. 10 ›› Issue (2): 161-166.
• Articles • Previous Articles Next Articles
WANG JIE, LU HONGQIANG, SHEN JUN, LI ZHESHEN, WANG JIANBAO, SHEN XIAOLIANG
Received:
Revised:
Online:
Published:
Abstract: Zn1-xMnxSe films are grown on the (100) GaAs substrate by hot wall epitaxy. The films are studied by X-ray diffraction, Raman and AES. The results show thai Single crystal (100) Zn1-xMnxSe films have been gotten and that x can be up to 0.17.
Key words: hot wall epitaxy, diluted magnetic semiconductors, Zn1-xMnxSe films
WANG JIE, LU HONGQIANG, SHEN JUN, LI ZHESHEN, WANG JIANBAO, SHEN XIAOLIANG. GROWTH OF Zn1-xMnxSe FILMS BY HOT WALL EPITAXY ON GaAs SUBSTRATE[J]. Journal of Applied Sciences, 1992, 10(2): 161-166.
0 / / Recommend
Add to citation manager EndNote|Reference Manager|ProCite|BibTeX|RefWorks
URL: https://www.jas.shu.edu.cn/EN/
https://www.jas.shu.edu.cn/EN/Y1992/V10/I2/161
