Abstract: Diamond crystallites have been grown on silicon substrates of different surface conditions by hot-filament method using alcohol. The nuoleation and growth mechanisms of the diamond film have been discussed. CH₃ is considered to be the main gas species of diamond nucleation; hydrogen atoms play an important role in nucleation and growth; and it is easier for diamond to nucleate on a silicon substrate of comparatively rough surface than on the one of a glossy surface.

Key words: diamond film, hot filament method, rough surface, nucleating growth mechanism