Abstract: Assuming the diffused impurity profile to be Gaussian,a resolution of the minority carrier continuity equation for the diffused region thinned by etching the surface has been given. On the basis of that, computations and analyses have been made for some practical examples. It has been shown that in order to increase the short circuit current contributed by the n⁺ diffused region, besides the lower surface recombination velocity and lower built-in field gradient,the higher built in field itseif is also important.In the present work it has also been shown that making deeper diffusion and etching the surface are effective to increase short circuit current contributed by the n⁺ diffused region only if the deeper diffusion is made together with the higher surface impurity concentration.

Key words: p-n junction, sem conductor, solar cell