Journal of Applied Sciences ›› 1995, Vol. 13 ›› Issue (1): 39-45.
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GU HONG, XIA GUANQUN, CHEN JINGYI, ZHU NANCHANG, SHENG HONGLIE, ZHOU ZHUYAO
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Abstract: GaAs films are implanted with Si ions at 180 keV with doses of 5×1012/cm2~1015/cm2 and then rapid thermal annealing is Performed by incoheret light.The strain and doping mechanisms are studied by double-crystal diffractometry in connection with backscattering and Hall measurement.The compensation ratios are calculated by using the Mobility theory.The results suggest that when implanting at low doses,the amphoteric property of Si plays the main role in the activation effcieney, and that at high implanting doses the low electrical activation is caused by the presence of interstitial Si.
Key words: ion implantation, double-crystal diffruction, GaAs
GU HONG, XIA GUANQUN, CHEN JINGYI, ZHU NANCHANG, SHENG HONGLIE, ZHOU ZHUYAO. X-RAY DOUBLE-CRYSATL DIFFRACTION SPECTRUM OF RAPID THERMAL ANNEALED Si+ IMPLANTED GaAs[J]. Journal of Applied Sciences, 1995, 13(1): 39-45.
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https://www.jas.shu.edu.cn/EN/Y1995/V13/I1/39
