Journal of Applied Sciences ›› 1997, Vol. 15 ›› Issue (4): 424-428.
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ZHU HONGWEI, SHI CHANGXIN, CHEN YIXIN
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Abstract: It is shown in this paper that the dark current of InGaAs MSM photodetectors can be greatly reduced with the structure of p-InGaAs Schottky barrier enhanccmcnt layer. Theoretical explanation is given and the lowest dark currents with the order of 10-11 A are obtained in our experiments.
Key words: photodetector, barrier enhancement layer
ZHU HONGWEI, SHI CHANGXIN, CHEN YIXIN. THE RESEARCH OF InGaAs MSM-PD SCHOTTKY BARRIER ENHANCEMENT LAYER[J]. Journal of Applied Sciences, 1997, 15(4): 424-428.
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https://www.jas.shu.edu.cn/EN/Y1997/V15/I4/424
