中文

Journal of Applied Sciences ›› 2000, Vol. 18 ›› Issue (3): 259-262.

• Articles • Previous Articles     Next Articles

A Base Transit Time Model for Ultra-thin-base SiGe HBT

LI Yao1, LIAO Xiao-ping2, WU Xiao-jie3, WEI Tong-li2, XU Ju-yan3   

  1. 1. Department if Physics, University of Science and Technology of China, Hefei 230026, China;
    2. Microelectronic Center, Southeast University, Nanjing 210018, China;
    3. Wuxi Research Institute of Applied Science and Engineering of Southeast University, Wuxi 214071, China
  • Received:1999-06-22 Revised:1999-10-29 Online:2000-09-30 Published:2000-09-30

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Abstract: The influences of non-equilibrium effect on the carrier temperature and diffusion coefficient in the ultra-thin-base SiGe HBT are analyzed in this paper. This leads to the forming of a base transit time model for ultra-thin-base SiGe HBT.

Key words: SiGe HBT, ultra-thin base, base transit time

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