Abstract: A tilt in the[111] crystallographic direction, and a tilt angle of 0.21850° were determined by XDRD (X-ray double crystal diffraction) in a CdTe/Cd 0.959 Zn 0.041 Te (112) B heterojunction grown by means of MBE (molecular beam epitaxy), and a quasi-Sine function between the rotation angle Δφ around sample surface normal and the diffraction angle difference Δθ was drawn in order to obtain optimal data. A special oriented cross-section of Hg_0.535 Cd_0.465 Te/CdTe/GaAs (112) B multilayer grown by MBE was prepared for HRTEM (high resolution transmission electron microscopy) determination, and the HRTEM images show that the buffer layer CdTe (112) relative to the substrate GaAs (112) is inclined by about 3° towards the[111] orientation at the CdTe/GaAs heterojunction, and that the epilayer Hg_0.535 Cd_0.465 Te (112) relative to the buffer layer CdTe (112) is inclined by about 1° towards the[111] orientation, in the opposite direction of[111] at the Hg_0.535 Cd_0.465 Te/CdTe heterojunction. The relationship of the tilt angles at the Hg_0.535 Cd_0.465 Te/CdTe/GaAs multilayer was also analyzed.

Key words: molecular beam epitaxy, heterojunctions, tilt angles