Journal of Applied Sciences ›› 1989, Vol. 7 ›› Issue (4): 367-370.

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RADIATION HARD CHARACTERISTIC OF NITRIDED OXIDES ON SILICON

SHANG LUMING, ZHANG JIAWEI, JIAN YAOGUANG   

  1. Nanking College of Technology
  • Received:1986-07-17 Revised:1986-12-27 Online:1989-12-31 Published:1989-12-31

Abstract: The effects of 60Co gamma radiation on Al-Nitrided SiO2-Si system and the electron beam (5 kev) on the Si LW Auger spectra of nitrided SiO2 films have been observed. The results show that the fixed charge density and the surface state density for the nitrided film appear to be less sensitive to gamma radiation than those for the SiO2 film and the electron beam effect is almost neligible, because of Si-N bonds in the nitrided film.