中文

Journal of Applied Sciences ›› 1995, Vol. 13 ›› Issue (4): 483-487.

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DIAMOND THIN FILMS DEPOSITION BY USING HALOGEN CONTAINING SOURCE MATERIALS

CAO CHUANBAO1, PENG DINGKUN2, MENG GUANGYAO2   

  1. 1. Fudan University;
    2. University of Science and Technology of China
  • Received:1993-12-16 Revised:1994-04-16 Online:1995-12-31 Published:1995-12-31

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Abstract: using CH4,CCl4 and H2 mixtures as source materials,We successfully synthe-sized diamond thin films at 570~580℃by the microwave plasma CVD process.The diamond thin films were characterized by the Raman spectrum,XRD,XPS and IR spectrum. The surface morphology of the films was observed with the Scanning Electron Mierosope. It was found that because CCl4 compound was introduced,the diamond nucleation density decreased.And when the concentration of CCl4 reached to 2.0%,no deposit but etehing pits could be formed.This was because of the existence of HCl in the system. The possible reason of substrate temperature decreasing in halogen containing system was discussed.

Key words: diamond, microwave plasma, CVD, CCl4