基于稳态集-射极饱和电压的IGBT功率模块疲劳失效模型的研究

doi:10.3969/j.issn.0255-8297.2024.06.015

Abstract

Abstract: With the increasing application of insulated gate bipolar transistor (IGBT) power module in both civil and military fields, the issue of fatigue aging under electrothermal stress has gained critical importance. Based on the theory of semiconductor physics and device reliability, this paper investigates package failures of IGBT power modules, and analyzes the mechanism and performance characteristics of solder layer and bonding line failures. By examining the IGBT conduction model, we propose a novel fatigue aging model based on the steady-state collector-emitter saturation voltage, enabling comprehensive characterization of packaging problems such as solder layer fatigue and wire fatigue. To validate the model, an electro-thermal aging test platform is built. Experimental results from cyclic aging tests verifies that the proposed fatigue aging model can accurately evaluate the fatigue aging degree of IGBT power module packages.

Key words: IGBT power module, package aging, electro-thermal stress, collector-emitter saturation voltage, failure model, life assessment

CLC Number:

P751.1

LU Jing, LI You. Research on Fatigue Failure Model of IGBT Power Module Based on Steady-State Collector-Emitter Saturation Voltage[J]. Journal of Applied Sciences, 2024, 42(6): 1078-1088.

References

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Research on Fatigue Failure Model of IGBT Power Module Based on Steady-State Collector-Emitter Saturation Voltage

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