中文

Journal of Applied Sciences ›› 1983, Vol. 1 ›› Issue (1): 71-76.

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MESFET/SOS IC FABRICATION AND DEVICE CHARACTERISTICS AT LIQUID NITROGEN TEMPERATURE

SHEN GUOXIONG1, ZHAO PENGCHENG2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Cornell University
  • Received:1981-12-19 Online:1983-03-31 Published:1983-03-31

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Abstract: In this paper, fabrication of a MESFET/SOS microwave differential amplifier is described. The full ion implantation technique is applied. Only three masks are needed to simplify the processes.
The D. C. and microwave properties for MESFET/SOS devices at room temperature and liquid nitrogen temperature (i. e. 77K) are also investigated.