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The I-V Character of Tunnel Junction Constituted by Ferroelectric Thin Film PbSrTiO3
CHEN Hong-wei, MIAO Jiang-ping, ZHAI Ya, WU Zong-han, SUN Cheng-xiu, SUN Ping
Journal of Applied Sciences
2002, 20 (2):
150-152.
The ferroelectric thin film PbSrTiO 3 is a typical ferroelectric film with wide application. In this paper, the measurement of the I-V characteristics of this thin ferroelectric system, which was prepared by RF magnetron spattering method is reported. We found, for the first time, the negative resistance phenomenon, and interpreted it through the application of the theory of surface plasmon polariton (SPP) and polarized-wave.
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